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| Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Durchlastrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stostrom Grenzwert surge forward current Grenzlastintegral I2t - value Tvj =25C TC =80C TC =80C tP = 10 ms, T vj = tP = 10 ms, T vj = 25C 25C VRRM IFRMSM IRMSmax IFSM 2 It 800 V 29 36 262 215 344 231 A A A A A2 s A2 s tP = 10 ms, T vj = 150C tP = 10 ms, T vj = 150C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value tP = 1 ms VR = 0V, t p = 10ms, T vj = 125C IF IFRM It 2 Tvj =25C TC = 65C TC = 25 C tP = 1 ms, TC = 25C T c=65C VCES IC,nom. IC ICRM Ptot VGES 600 20 25 40 78 +/- 20V V A A A W V 20 40 62 A A As 2 Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Thomas Passe approved by: Ingo Graf tP = 1 ms IF IFRM 20 40 A A Tvj =25C TC = 65 C TC = 25 C tP = 1 ms, TC = 25C T c=65C VCES IC,nom. IC ICRM Ptot VGES 600 20 25 40 78 +/- 20V V A A A W V date of publication: 2002-02-14 revision: 4 1(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Tvj = 150C, Tvj = 150C Tvj = 150C Tvj = 150C, V R = 800 V I F = 20 A VF V(TO) rT IR RAA'+CC' min. - typ. 0,95 0,71 12 5 max. V V mW mA Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, T vj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, T vj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, Tvj = 25C, - 11 - mW min. I C = 20 A I C = 20 A I C = 0,5mA VGE(TO) Cies ICES IGES VCE sat 4,5 - typ. 1,95 2,2 5,5 1,1 5,0 - max. 2,55 6,5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, V GE = 0 V VGE = 0V, Tvj =125C, V CE = 600V VCE = 0V, V GE =20V, Tvj =25C IC = INenn, V CC = 300 V 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 125C, R G = L IC = INenn, S td,on - 22 31 23 37 143 154 22 38 0,7 - ns ns ns ns ns ns ns ns mWs V CC = 300 V tr td,off tf Eon - V CC = 300 V V CC = 300 V V CC = 300 V = 80 nH 47 Ohm 47 Ohm 360 V ISC 90 A Eoff 0,6 mWs V CC = 300 V L S VGE = 15V, Tvj = 125C, R G = tP 10s, V GE 15V, Tvj125C, RG = VCC = = 80 nH 2(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, IF=INenn, I F = 20 A I F = 20 A 300 V 300 V 300 V 300 V 300 V 300 V Erec Qr IRM VF LsCE RCC'+EE' - typ. 13 max. 40 nH mW min. - typ. 1,7 1,7 20 23 1 1,7 0,2 0,35 max. 2,15 V V A A As As mWs mWs - diF/dt = 1000 A/us VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = - diF/dt = 1000 A/us - diF/dt = 1000 A/us Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, T vj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VGE = 15V, T vj = 125C, VCE = VGE, Tvj = 25C, min. I C = 20,0 A I C = 20,0 A I C = 0,5mA VGE(TO) Cies VCE sat 4,5 IGES - typ. 1,95 2,2 5,5 1,1 5,0 - max. 2,55 6,5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, V GE = 0 V VGE = 0V, Tvj = 125C, V CE = 600V VCE = 0V, V GE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, min. IF= IF= 20A 20A VF - typ. 2,45 2,55 max. 2,9 V V NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. TC = 25C TC = 100C, R 100 = 493 W TC = 25C R2 = R1 exp [B(1/T2 - 1/T1)] R25 DR/R P25 B25/50 -5 typ. 5 max. 5 20 kW % mW K 3375 3(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to heatsink Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH RthJC lPaste=1W/m*K RthCH Tvj Top Tstg -40 -40 typ. 2,1 1,8 3,7 1,8 4,3 0,3 0,4 1,3 0,4 1,5 - max. 2 1,6 2,7 1,6 3,1 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W C C C Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Innerer Warmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Ubergangs-Warmewiderstand thermal resistance, case to heatsink Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anprekraft f. mech. Befestigung mounting force Gewicht weight Kontakt - Kuhlkorper terminal to heatsink Kriechstrecke creeping distance Luftstrecke clearance Terminal - Terminal terminal to terminal Kriechstrecke creeping distance Luftstrecke clearance F Al2O3 225 40...80 36 13,5 12 7,5 7,5 N G g mm mm mm mm 4(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 40 Tj = 25C 35 30 25 Tj = 125C IC [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 40 VGE = 8V 35 30 25 VGE = 9V VGE = 10V Vge=12V Vge=15V Vge=20V IC = f (VCE) T vj = 125C IC [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] 5(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary IC = f (VGE) VCE = 20 V Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 40 Tj = 25C 35 30 25 Tj = 125C IC [A] 20 15 10 5 0 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 40 Tj = 25C 35 30 25 Tj = 125C IF = f (VF) IF [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VF [V] 6(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary E = f (IC), Eoff = f (IC), Erec = f (IC) on T j = 125C, V GE = 15 V, VCC = 300 V 47 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 3 Eon 2,5 Eoff Erec R Gon = RGoff = 2 E [mWs] 1,5 1 0,5 0 0 5 10 15 20 25 30 35 40 45 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 3 Eon 2,5 Eoff Erec E = f (RG), Eoff = f (RG), Erec = f (RG) on T j = 125C, V GE = +-15 V , I c = Inenn , V CC = 300 V 2 E [mWs] 1,5 1 0,5 0 40 50 60 70 80 90 100 110 120 RG [W] 7(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary ZthJH = f (t) Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter 10,000 Zth-IGBT Zth-FWD ZthJH [K/W] 1,000 i 1 2 3 IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3 4 624,52e-3 226,61e-3 1,27 227,3e-3 10 ti [s]: 3e-6 FWD: r i [K/W]: 245,4e-3 ti [s]: 0,100 0,001 0,01 0,1 79,74e-3 1,22 80,4e-3 10,28e-3 956,8e-3 10,35e-3 1 3e-6 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) 45 40 35 30 25 20 15 10 5 0 0 100 200 300 400 IC,Modul IC,Chip IC = f (VCE) 47 Ohm Reverse bias save operating area Inverter (RBSOA)Tvj = 125C, V GE = 15V, R G = IC [A] 500 600 700 VCE [V] 8(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) 40 35 30 25 Tj = 25C Tj = 125C IC [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 40 35 30 25 Tj = 25C Tj = 125C IF [A] 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VF [V] 9(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary IF = f (VF) Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 40 35 30 25 Tj = 25C Tj = 150C IF [A] 20 15 10 5 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[W] 1000 100 0 20 40 60 80 100 120 140 TC [C] 10(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorlaufig Preliminary Schaltplan/ Circuit diagram J Gehauseabmessungen/ Package outlines Bohrplan / drilling layout 11(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Gehauseabmessungen Forts. / Package outlines contd. Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 12(12) Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 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